= 0.10鈩?/div>
Schottky Vf = 0.52V
2
3
6
4
5
Top Vie w
Description
The
FETKY
family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (T
A
= 25擄C unless otherwise noted)
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current
聫
Pulsed Drain Current
聦
Power Dissipation
聫
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聧
Junction and Storage Temperature Range
Maximum
-3.6
-2.9
-29
2.0
1.3
16
鹵 20
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
聫
Maximum
62.5
Units
擄C/W
Notes:
聦
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
聧
I
SD
鈮?/div>
-1.8A, di/dt
鈮?/div>
-90A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聨
Pulse width
鈮?/div>
300碌s; duty cycle
鈮?/div>
2%
聫
Surface mounted on FR-4 board, t
鈮?/div>
10sec.
www.irf.com
1
8/19/99
IRF7326D2 產(chǎn)品屬性
95
分離式半導(dǎo)體產(chǎn)品
FET - 單
FETKY™
MOSFET P 通道，金屬氧化物
二極管（隔離式）
30V
-
100 毫歐 @ 1.8A，10V
1V @ 250µA
25nC @ 10V
440pF @ 25V
2W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SO
管件
IRF7326D2相關(guān)型號(hào)PDF文件下載
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