= 0.18鈩?/div>
Schottky Vf = 0.39V
3
6
4
5
T op V ie w
Description
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (T
A
= 25擄C unless otherwise noted)
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@4.5V聫
Pulsed Drain Current
聦
Power Dissipation
聫
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聧
Junction and Storage Temperature Range
Maximum
-2.9
-2.3
-23
2.0
1.3
16
鹵 12
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
聫
Maximum
62.5
Units
擄C/W
Notes:
聦
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
聧
I
SD
鈮?/div>
-2.2A, di/dt
鈮?/div>
-50A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聨
Pulse width
鈮?/div>
300碌s; duty cycle
鈮?/div>
2%
聫
Surface mounted on FR-4 board, t
鈮?/div>
10sec.
www.irf.com
1
IRF7324D1TR 產(chǎn)品屬性
4,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
FETKY™
MOSFET P 通道，金屬氧化物
二極管（隔離式）
20V
2.2A
270 毫歐 @ 1.2A，4.5V
700mV @ 250µA
7.8nC @ 4.5V
260pF @ 15V
2W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SO
帶卷 (TR)
IRF7324D1TR相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 2.25A, 350-400V
FAIRCHILD ...
-
英文版
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD
-
英文版
TRANSISTORS N-CHANNEL
IRF
-
英文版
N-CHANNEL POWER MOSFETS
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD ...
-
英文版
N-CHANNEL POWER MOSFETS
SAMSUNG [S...
-
英文版
TRANSISTORS N-CHANNEL
IRF [Inter...
-
英文版
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTORS N-CHANNEL
IRF
-
英文版
N-Channel Power MOSFETs, 3.0 A, 350-400 V
FAIRCHILD
1
2
3
4
5
6
7
8
