= 0.062鈩?/div>
Schottky Vf = 0.52V
2
7
3
6
4
5
Top View
Description
The
FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings ( T
A
= 25擄C Unless Otherwise Noted)
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
脌
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
脕
Junction and Storage Temperature Range
Maximum
-4.7
-3.8
-38
2.0
1.3
16
鹵 20
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
脙
Maximum
62.5
Units
擄C/W
Notes:
聛
Repetitive rating 鈥?pulse width limited by max. junction temperature (see fig. 11)
聜
I
SD
鈮?/div>
-2.9A, di/dt
鈮?/div>
-77A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聝
Pulse width
鈮?/div>
300碌s 鈥?duty cycle
鈮?/div>
2%
聞
Surface mounted on FR-4 board, t
鈮?/div>
10sec.
1
www.irf.com
10/15/04
IRF7321D2 產(chǎn)品屬性
95
分離式半導(dǎo)體產(chǎn)品
FET - 單
FETKY™
MOSFET P 通道，金屬氧化物
二極管（隔離式）
30V
4.7A
62 毫歐 @ 4.9A，10V
1V @ 250µA
34nC @ 10V
710pF @ 25V
2W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SO
管件
*IRF7321D2
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