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IRF7314Q Datasheet

  • IRF7314Q

  • -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

  • 9頁

  • ETC

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PD -93945A
IRF7314Q
HEXFET
廬
Power MOSFET
Typical Applications
鈥?/div>
Anti-lock Braking Systems (ABS)
鈥?/div>
Electronic Fuel Injection
鈥?/div>
Air bag
Benefits
鈥?/div>
Advanced Process Technology
鈥?/div>
Dual P-Channel MOSFET
鈥?/div>
Ultra Low On-Resistance
鈥?/div>
175擄C Operating Temperature
鈥?/div>
Repetitive Avalanche Allowed up to Tjmax
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Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, these HEXFET 廬 Power MOSFET鈥檚 in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET鈥檚 are a 175擄C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175擄C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
V
DSS
-20V
R
DS(on)
max
0.058@V
GS
= -4.5V
0.098@V
GS
= -2.7V
I
D
-5.2A
-4.42A
S1
G1
S2
G2
1
8
D1
D1
D2
D2
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
E
AS
I
AR
E
AR
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Maximum Power Dissipation
S
Maximum Power Dissipation
S
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
-20
-5.2
-4.3
-43
2.4
1.7
16
鹵 12
610
-5.2
See Fig.14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/擄C
V
mJ
A
mJ
擄C
Thermal Resistance
R
胃JA
Max.
Maximum Junction-to-Ambient
S
Parameter
Units
62.5
擄C/W
www.irf.com
1
03/20/02

IRF7314Q相關(guān)型號PDF文件下載

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