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IRF7313 Datasheet

  • IRF7313

  • HEXFET POWER MOSFET

  • 7頁

  • IRF

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PD - 91480B
IRF7313
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated
HEXFET
廬
Power MOSFET
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
V
DSS
= 30V
R
DS(on)
= 0.029鈩?/div>
3
6
4
5
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Description
SO-8
Absolute Maximum Ratings ( T
A
= 25擄C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
聟
T
A
= 25擄C
T
A
= 70擄C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25擄C
Maximum Power Dissipation
聟
T
A
= 70擄C
Single Pulse Avalanche Energy
聜
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
聝
Junction and Storage Temperature Range
30
鹵 20
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
5.8
-55 to + 150
A
W
mJ
A
mJ
V/ ns
擄C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
聟
Symbol
R
胃JA
Limit
62.5
Units
擄C/W
9/12/02

IRF7313 產(chǎn)品屬性

  • 95

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • 2 個(gè) N 溝道（雙）

  • 標(biāo)準(zhǔn)型

  • 30V

  • 6.5A

  • 29 毫歐 @ 5.8A，10V

  • 1V @ 250µA

  • 33nC @ 10V

  • 650pF @ 25V

  • 2W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 管件

  • *IRF7313

IRF7313相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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