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IRF7313QPBF Datasheet

  • IRF7313QPBF

  • HEXFET Power MOSFET

  • 7頁

  • IRF

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PD - 96125
IRF7313QPbF
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dual N- Channel MOSFET
Surface Mount
Available in Tape & Reel
150擄C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
S1
G1
S2
G2
1
2
8
7
D1
D1
D2
D2
V
DSS
= 30V
R
DS(on)
= 0.029鈩?/div>
3
4
6
5
Top View
Description
Specifically designed for Automotive applications, these
HEXFET
廬
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150擄C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings ( T
A
= 25擄C Unless Otherwise Noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
聟
T
A
= 25擄C
T
A
= 70擄C
Maximum
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25擄C
Maximum Power Dissipation
聟
T
A
= 70擄C
Single Pulse Avalanche Energy
聜
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
聝
Junction and Storage Temperature Range
30
鹵 20
6.5
5.2
30
2.5
2.0
1.3
82
4.0
0.20
5.8
-55 to + 150
A
W
mJ
A
mJ
V/ ns
擄C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
聟
Symbol
R
胃JA
Limit
62.5
Units
擄C/W
www.irf.com
1
09/04/07

IRF7313QPBF 產品屬性

  • International Rectifier

  • N-Channel

  • 30 V

  • 20 V

  • 6.5 A

  • 46 mOhms

  • Dual

  • SMD/SMT

  • SOIC-8

  • 22 nC

  • 2 W

IRF7313QPBF相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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