PD- 94087
IRF7241
HEXFET
廬
Power MOSFET
q
q
q
q
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Available in Tape & Reel
V
DSS
-40V
R
DS(on)
max (m鈩?
鈩?
41@V
GS
= -10V
70@V
GS
= -4.5V
I
D
-6.2A
-5.0A
Description
New trench HEXFET
廬
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S
1
8
7
A
D
D
D
D
S
S
G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
聛
Power Dissipation
聝
Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-6.2
-4.9
-25
2.5
1.6
20
鹵 20
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聝
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
www.irf.com
1
1/26/01
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