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IRF7103QPBF Datasheet

  • IRF7103QPBF

  • AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

  • 10頁(yè)

  • IRF

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PD - 96101
AUTOMOTIVE MOSFET
Typical Applications
l
l
l
IRF7103QPbF
HEXFET
廬
Power MOSFET
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175擄C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Lead-Free
V
DSS
50V
R
DS(on)
max (mW)
130@V
GS
= 10V
200@V
GS
= 4.5V
I
D
3.0A
1.5A
Benefits
l
l
l
l
l
l
l
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Description
Specifically designed for Automotive applications, these
HEXFET
廬
Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175擄C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
Top View
SO-8
in Tape & Reel.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
聛
Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聞
Avalanche Current聛
Repetitive Avalanche Energy聠
Peak Diode Recovery dv/dt
聟
Junction and Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
鹵 20
22
See Fig.16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
mW/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聝
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
www.irf.com
1
07/23/07

IRF7103QPBF 產(chǎn)品屬性

  • International Rectifier

  • N-Channel

  • 50 V

  • 20 V

  • 3 A

  • 200 mOhms

  • Dual

  • SMD/SMT

  • SOIC-8

  • 10 nC

  • 2.4 W

IRF7103QPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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