= 0.130鈩?/div>
I
D
= 3.0A
3
6
4
5
Top View
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
3.0
2.3
10
2.0
0.016
鹵 20
4.5
-55 to + 150
Units
A
W
W/擄C
V
V/nS
擄C
Thermal Resistance Ratings
R
胃JA
Maximum Junction-to-Ambient
聞
Parameter
Min.
聳聳聳
Typ.
聳聳聳
Max.
62.5
Units
擄C/W
www.irf.com
1
07/07/06