PD - 95867A
HEXFET
廬
Power MOSFET plus Schottky Diode
Application Specific MOSFETs
Integrates Monolithic Trench Schottky Diode
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Reverse Recovery Losses
l
Low Switching Losses
l
Low Reverse Recovery Charge and Low Vf
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
l
IRF6691
Qg(typ.)
47nC
V
DSS
20V
R
DS(on)
max
2.5m鈩V
GS
= 4.5V
1.8m鈩V
GS
= 10V
MT
DirectFET聶 ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6691
combines IR聮s industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode.
The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows
dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (R
DS(on)
), reverse recovery charge (Q
rr
) and source to drain
voltage (V
SD
) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691
has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
鹵12
180
32
26
260
2.8
1.8
89
0.022
-40 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
Power Dissipation
c
W
W/擄C
擄C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.0
Max.
45
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.4
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-PCB Mounted
Notes
聛
through
聢
are on page 10
www.irf.com
1
11/3/04
IRF6691 產品屬性
4,800
分離式半導體產品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門
20V
32A
1.8 毫歐 @ 15A，10V
2.5V @ 250µA
71nC @ 4.5V
6580pF @ 10V
2.8W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
帶卷 (TR)
IRF6691TR
IRF6691相關型號PDF文件下載
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型號
版本
描述
廠商
下載
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英文版
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英文版
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英文版
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英文版
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英文版
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英文版
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
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英文版
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英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
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英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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英文版
Power MOSFET
TRSYS
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英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
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英文版
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