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IRF6668 Datasheet

  • IRF6668

  • DirectFET Power MOSFET

  • 252.22KB

  • 9頁

  • IRF

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PD - 97044A
IRF6668
DirectFET聶 Power MOSFET
聜
l
l
l
l
l
l
l
l
l
RoHS compliant containing no lead or bromide
聛
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
聛
Ultra Low Package Inductance
Optimized for High Frequency Switching
聛
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
聛
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
Q
g
tot
Q
gd
7.8nC
80V max 鹵20V max 12m鈩 10V
22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
聛
SH
SJ
SP
MZ
MN
DirectFET聶
ISOMETRIC
The IRF6668 combines the latest HEXFET廬 power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(鹵10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Description
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
I
S
@ T
C
= 25擄C
I
S
@ T
C
= 70擄C
I
SM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Max.
Units
V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
e
f
f
e
f
f
80
鹵20
55
44
170
81
52
170
A
Notes:
聛
Click on this section to link to the appropriate technical paper.
聜
Click on this section to link to the DirectFET Website.
聝
Repetitive rating; pulse width limited by max. junction temperature.
聞
T
C
measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
11/4/05

IRF6668 產(chǎn)品屬性

  • 7.1 ns

  • 19 ns

  • 22 nC V @ 10

  • 1320 pF V @ 25

  • 表面貼裝

  • 5.05mm

  • DirectFET MZ

  • 5.45 x 5.05 x 0.6mm

  • 7

  • -40 °C

  • 2800 mW

  • ±20 V

  • 80 V

  • 0.015

  • 55 A

  • +150 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 雙源、四漏極、單

  • 5.45mm

  • 0.6mm

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