鈥?/div>
Dual sided cooling compatible
路
Compatible with existing surface mount technologies
路
Lead and Bromide Free
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
V
DS
R
DS(on)
typ. @ V
GS
= 10V
Q
g
typ.
R
G(int)
typ.
SH
ST
SH
MQ
MX
MT
MN
DirectFET聶 ISOMETRIC
SQ
SX
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
e
Power Dissipation
e
Maximum Power Dissipation
Max.
100
鹵 20
19
4.2
3.4
34
42
2.2
1.4
0.017
-40 to + 150
Units
V
A
c
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/擄C
擄C
Thermal Resistance
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
ek
Junction-to-Ambient
hk
Junction-to-Ambient
ik
Junction-to-Case
jk
Junction-to-Ambient
Parameter
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.4
Max.
58
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鈥撯€撯€?/div>
3.0
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-PCB Mounted
Notes
聛
through
聤
are on page 2
www.irf.com
1
10/11/04
IRF6665 產(chǎn)品屬性
4,800
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
標準型
100V
4.2A
62 毫歐 @ 5A，10V
5V @ 250µA
13nC @ 10V
530pF @ 25V
2.2W
表面貼裝
DirectFET? 等容 SH
DIRECTFET? SH
帶卷 (TR)
IRF6665相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
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5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
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Power MOSFET
TRSYS
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