PD - 96908C
IRF6644
DirectFET聶 Power MOSFET
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l
l
l
l
l
l
l
l
l
Lead and Bromide Free
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Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
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Ultra Low Package Inductance
Optimized for High Frequency Switching
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Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
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Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
11.5nC
R
DS(on)
V
gs(th)
3.7V
100V max 鹵20V max 10.7m鈩 10V
35nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
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SQ
SX
ST
MQ
MX
MT
MN
DirectFET聶 ISOMETRIC
Description
The IRF6644 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
0.12
Typical R DS (on), (鈩?
(m鈩?
Max.
100
鹵20
10.3
8.3
60
82
220
6.2
14
TA= 25擄C
13
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
A
Single Pulse Avalanche Energy
脙g
mJ
A
ID = 6.2A
0.08
VGS = 7.0V
VGS = 8.0V
DS(on)
12
0.04
TJ = 125擄C
0.00
4.0
TJ = 25擄C
6.0
8.0
10.0 12.0 14.0
VGS, Gate-to-Source Voltage (V)
16.0
Typical R
VGS = 10V
VGS = 15V
11
10
0
4
8
12
16
20
ID, Drain Current (A)
Fig 2.
Typical On-Resistance Vs. Drain Current
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Notes:
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Click on this section to link to the appropriate technical paper.
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Click on this section to link to the DirectFET Website.
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Surface mounted on 1 in. square Cu board, steady state.
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T
C
measured with thermocouple mounted to top (Drain) of part.
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Repetitive rating; pulse width limited by max. junction temperature.
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Starting T
J
= 25擄C, L = 12mH, R
G
= 25鈩? I
AS
= 6.2A.
www.irf.com
1
11/23/04
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