PD - 96977B
IRF6636
DirectFET鈩?Power MOSFET
Typical values (unless otherwise specified)
RoHS compliant containing no lead or bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
20V max 鹵20V max 3.2m鈩 10V 4.6m鈩 4.5V
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
18nC
6.1nC 1.9nC 7.3nC
10nC
1.8V
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for Control FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET鈩?ISOMETRIC
Description
The IRF6636 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6636 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
20
Typical RDS(on) (m鈩?
Max.
20
鹵20
18
15
81
140
28
14
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
ID= 14A
A
mJ
A
ID = 18A
15
10
5
T J = 25擄C
0
0
1
2
3
4
5
6
7
8
9
10
VDS= 16V
VDS= 10V
T J = 125擄C
20
30
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
Starting T
J
= 25擄C, L = 0.27mH, R
G
= 25鈩? I
AS
= 14A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
1
06/13/05
1
2
3
4
5
6
7
8
9
