PD - 96981B
IRF6635
DirectFET鈩?Power MOSFET
Typical values (unless otherwise specified)
RoHs compliant containing no lead or bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
Low Profile (<0.7 mm)
30V max 鹵20V max 1.3m鈩 10V 1.8m鈩 4.5V
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
47nC
17nC
4.7nC
48nC
29nC
1.8V
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for SyncFET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET鈩?ISOMETRIC
Description
The IRF6635 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635 has
been optimized for parameters that are critical in synchronous buck converter鈥檚 SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
10
Typical RDS(on) (m鈩?
Max.
30
鹵20
32
25
180
250
200
25
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
ID= 25A
ID = 32A
A
mJ
A
8
6
4
2
0
0
1
2
T J = 25擄C
3
4
5
6
7
VDS= 24V
VDS= 15V
T J = 125擄C
8
9
10
30
40
50
60
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
Starting T
J
= 25擄C, L = 0.63mH, R
G
= 25鈩? I
AS
= 25A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
06/02/05
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