PD - 96989
IRF6633
DirectFET聶 Power MOSFET
聜
l
l
l
l
l
l
l
l
l
RoHs Compliant Containing No Lead and Bromide
聛
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
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Ultra Low Package Inductance
Optimized for High Frequency Switching
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Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
application聛
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
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Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max 鹵20V max 4.1m鈩 10V 7.0m鈩 4.5V
Q
g
tot
Q
gd
4.0nC
Q
gs2
1.2nC
Q
rr
32nC
Q
oss
8.8nC
V
gs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
聛
SQ
SX
ST
MQ
MX
MT
MP
DirectFET聶 ISOMETRIC
Description
The IRF6633 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
20
Typical R DS (on) (m鈩?
Max.
20
鹵20
16
13
59
132
41
13
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
4
8
ID= 13A
A
Single Pulse Avalanche Energy
脙g
mJ
A
ID = 16A
15
10
TJ = 125擄C
5
TJ = 25擄C
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 16V
VDS= 10V
12
16
20
24
Notes:
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Click on this section to link to the appropriate technical paper.
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Click on this section to link to the DirectFET Website.
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Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
聞
T
C
measured with thermocouple mounted to top (Drain) of part.
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Repetitive rating; pulse width limited by max. junction temperature.
聠
Starting T
J
= 25擄C, L = 0.51mH, R
G
= 25鈩? I
AS
= 13A.
www.irf.com
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