PD -96907A
IRF6614
DirectFET聶 Power MOSFET
聜
l
l
l
l
l
l
l
l
l
l
Application Specific MOSFETs
V
DSS
V
GS
R
DS(on)
R
DS(on)
Lead and Bromide Free
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40V max 鹵20V max 5.9m鈩 10V 7.1m鈩 4.5V
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
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Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
19nC
6.0nC 1.4nC 5.5nC 9.5nC
1.8V
Optimized for High Frequency Switching above 1MHz
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Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
Optimized for Control FET socket of Sync. Buck Converter聛
Low Conduction Losses
Compatible with existing Surface Mount Techniques
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DirectFET聶 ISOMETRIC
ST
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
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SQ
SX
ST
MQ
MX
MT
Description
The IRF6614 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
20
Typical R DS (on) (m鈩?
Max.
40
鹵20
12.7
10.1
55
102
22
10.2
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
e
h
@ 10V
h
@ 10V
k
f
12
10
8
6
4
2
0
0
10
ID= 10.2A
A
Single Pulse Avalanche Energy
脙e
mJ
A
ID = 12.7A
16
12
8
4
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 32V
VDS= 20V
TJ = 125擄C
TJ = 25擄C
20
30
40
50
Notes:
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Click on this section to link to the appropriate technical paper.
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Click on this section to link to the DirectFET MOSFETs
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Repetitive rating; pulse width limited by max. junction temperature.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
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Starting T
J
= 25擄C, L = 0.43mH, R
G
= 25鈩? I
AS
= 10.2A.
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Surface mounted on 1 in. square Cu board, steady state.
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T
C
measured with thermocouple mounted to top (Drain) of part.
www.irf.com
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11/8/04
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