PD - 96978A
IRF6611
DirectFET鈩?Power MOSFET
Typical values (unless otherwise specified)
Low Profile (<0.7 mm)
V
DSS
V
GS
R
DS(on)
R
DS(on)
Dual Sided Cooling Compatible
30V max 鹵20V max 2.0m鈩 10V 2.6m鈩 4.5V
Ultra Low Package Inductance
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Optimized for High Frequency Switching above 1MHz
Ideal for CPU Core DC-DC Converters
37nC
12nC
3.3nC
16nC
23nC
1.7V
Optimized for SyncFET Socket of Sync. Buck Converter
Low Conduction Losses
Compatible with Existing Surface Mount Techniques
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET鈩?ISOMETRIC
Description
The IRF6611 combines the latest HEXFET廬 power MOSFET silicon technology with advanced DirectFET
TM
packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on)
, gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
20
Typical RDS(on) (m鈩?
Max.
30
鹵20
27
22
150
220
210
22
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
ID= 22A
A
mJ
A
ID = 27A
15
10
5
0
0
1
T J = 25擄C
2
3
4
5
6
7
8
9
10
T J = 125擄C
VDS= 24V
VDS= 15V
20
30
40
50
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance vs. Gate Voltage
Starting T
J
= 25擄C, L = 0.91mH, R
G
= 25鈩? I
AS
= 22A.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
04/18/05
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