PD - 97216
IRF6611PbF
IRF6611TRPbF
RoHs Compliant
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l
Lead-Free (Qualified up to 260擄C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
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l
Compatible with existing Surface Mount Techniques
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l
DirectFET聶 Power MOSFET
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Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
12nC
R
DS(on)
Q
gs2
3.3nC
R
DS(on)
Q
oss
23nC
30V max 鹵20V max 2.0m鈩 10V 2.6m鈩 4.5V
Q
rr
16nC
V
gs(th)
1.7V
37nC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
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SQ
SX
ST
MQ
MX
MT
MX
DirectFET聶 ISOMETRIC
Description
The IRF6611PbF combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6611PbF has been optimized for parameters that
are critical in synchronous buck converter鈥檚 SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
20
Typical RDS(on) (m
鈩?
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
脙g
h
VGS, Gate-to-Source Voltage (V)
30
鹵20
32
26
150
220
310
22
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
ID= 22A
VDS= 24V
VDS= 15V
A
mJ
A
ID = 27A
15
10
5
0
0
1
T J = 25擄C
2
3
4
5
6
7
8
9
10
T J = 125擄C
50
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
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Click on this section to link to the appropriate technical paper.
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Click on this section to link to the DirectFET Website.
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Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical On-Resistance vs. Gate Voltage
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T
C
measured with thermocouple mounted to top (Drain) of part.
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Repetitive rating; pulse width limited by max. junction temperature.
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Starting T
J
= 25擄C, L = 0.91mH, R
G
= 25鈩? I
AS
= 22A.
www.irf.com
1
05/29/06
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