PD - 95822A
HEXFET
廬
l
Low Conduction Losses
IRF6609
Power MOSFET
Qg
46nC
V
DSS
20V
R
DS(on)
max
2.0m鈩V
GS
= 10V
2.6m鈩V
GS
= 4.5V
Low Switching Losses
l
Ideal Synchronous Rectifier MOSFET
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount
Techniques
l
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
MT
DirectFET聶 ISOMETRIC
Description
The IRF6609 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
鹵20
150
31
25
250
2.8
1.8
89
0.022
-40 to + 150
Units
V
A
g
Power Dissipation
g
Power Dissipation
c
W
W/擄C
擄C
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.0
Max.
45
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.4
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-PCB Mounted
Notes
聛
through
聢
are on page 10
www.irf.com
1
11/10/04
IRF6609 產(chǎn)品屬性
4,800
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門(mén)
20V
31A
2 毫歐 @ 31A，10V
2.45V @ 250µA
69nC @ 4.5V
6290pF @ 10V
1.8W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
帶卷 (TR)
IRF6609TR
IRF6609相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠(chǎng)商
下載
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
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英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
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英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
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英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
Power MOSFET
TRSYS
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
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