PD - 94574B
HEXFET
廬
Power MOSFET
l
IRF6607
Qg(typ.)
50nC
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface
Mount Techniques
V
DSS
30V
R
DS(on)
max
3.3m鈩V
GS
= 10V
4.4m鈩V
GS
= 4.5V
MT
MX
MT
DirectFET聶 ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
Description
The IRF6607 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
鹵12
94
27
22
220
3.6
2.3
42
0.029
-40 to + 150
Units
V
A
g
g
c
W
W/擄C
擄C
Thermal Resistance
Parameter
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
fj
gj
hj
ij
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
35
鈥撯€撯€?/div>
鈥撯€撯€?/div>
3.0
1.0
Units
擄C/W
Notes
聛
through
聢
are on page 11
www.irf.com
1
4/8/04
IRF6607TR1 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
27A
3.3 毫歐 @ 25A，10V
2V @ 250µA
75nC @ 4.5V
6930pF @ 15V
3.6W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
帶卷 (TR)
IRF6607TR1相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
Power MOSFET
TRSYS
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
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