PD-94363C
IRF6602/IRF6602TR1
HEXFET
廬
Power MOSFET
V
DSS
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
R
DS(on)
max
13m鈩V
GS
= 10V
19m鈩V
GS
= 4.5V
Qg
12nC
20V
MQ
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET聶 ISOMETRIC
Description
The IRF6602 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
鹵20
48
11
8.9
89
2.3
1.5
42
0.018
-40 to + 150
Units
V
g
Power Dissipation
g
Power Dissipation
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/擄C
擄C
Thermal Resistance
Parameter
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
i
f
g
h
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.0
Max.
55
鈥撯€撯€?/div>
鈥撯€撯€?/div>
3.0
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-PCB Mounted
Notes
聛
through
聡
are on page 11
www.irf.com
1
3/1/04
IRF6602TR1相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠(chǎng)商
下載
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
Power MOSFET
TRSYS
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
1
2
3
4
5
6
7
8
9
10
11
