鈩?/div>
@V
GS
= 4.5V
I
D
26A
21A
Description
DirectFET
聶
ISOMETRIC
The
IRF6601 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
85
26
20
200
3.6
2.3
42
28
鹵20
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
Parameter
Junction-to-Ambient
聝
Junction-to-Ambient
聞
Junction-to-Ambient
聟
Junction-to-Case
聠
Junction-to-PCB mounted
Typ.
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Max.
35
12.5
20
3.0
1.0
Units
擄C/W
www.irf.com
1
3/25/02
IRF6601 產(chǎn)品屬性
1
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
20V
26A
3.8 毫歐 @ 26A，10V
2.2V @ 250µA
45nC @ 4.5V
3440pF @ 15V
3.6W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
剪切帶 (CT)
IRF6601CT
IRF6601相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
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英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
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英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
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英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
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英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
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英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
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英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
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英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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英文版
Power MOSFET
TRSYS
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英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
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英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
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英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
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