鈩?/div>
@V
GS1,2
= -2.5V -6.3A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design that International Rectifier
is well known for,
provides the designer with an ex-
6
*
*
6
tremely efficient and reliable device.
The
FlipFET聶
package, is one-third the footprint of a
comparable SO-8 package and has a profile of less than
.8mm. Combined with the low thermal resistance of the
die level device, this makes the
FlipFET聶
the best device
for applications where printed circuit board space is at a
premium and in extremely thin application environments
such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
SS
I
S
@ T
C
= 25擄C
I
S
@ T
C
= 70擄C
I
SM
P
D
@T
C
= 25擄C
P
D
@T
C
= 70擄C
V
GS
T
J,
T
STG
Source- Source Voltage
Continuous Current, V
GS1
= V
GS2
= -4.5V
Continuous Current, V
GS1
= V
GS2
= -4.5V
Pulsed Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
鹵7.9
鹵6.3
鹵40
3.0
1.9
24
鹵 12
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JA
R
胃J-PCB
Parameter
Junction-to-Ambient
聝
Junction-to-PCB mounted
Typ.
17
Max.
42
鈥撯€撯€?/div>
Units
擄C/W
www.irf.com
1
07/26/04
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