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IRF6100 Datasheet

  • IRF6100

  • HEXFET Power MOSFET

  • 8頁(yè)

  • IRF

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PD - 93930E
IRF6100
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Ultra Low
R
DS(on)
per Footprint Area
Low
Thermal Resistance
P-Channel MOSFET
One-third Footprint of SOT-23
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
V
DSS
-20V
R
DS(on)
max
0.065
鈩?/div>
@V
GS
= -4.5V
0.095
鈩?/div>
@V
GS
= -2.5V
I
D
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
the ruggedized device design , that International Rectifier
is well known for,
provides the designer with an ex-
D
G
S
FlipFET
聶
ISOMETRIC
tremely efficient and reliable device.
The FlipFET鈩?package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET鈩?the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
聛
Power Dissipation
聝
Power Dissipation
聝
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
鹵5.1
鹵3.5
鹵35
2.2
1.4
17
鹵 12
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JA
R
胃J-PCB
Parameter
Junction-to-Ambient
聝
Junction-to-PCB mounted
Typ.
35
Max.
56.5
鈥撯€撯€?/div>
Units
擄C/W
www.irf.com
1
5/2/05

IRF6100 產(chǎn)品屬性

  • 6,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET P 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 20V

  • 5.1A

  • 65 毫歐 @ 5.1A，4.5V

  • 1.2V @ 250µA

  • 21nC @ 5V

  • 1230pF @ 15V

  • 2.2W

  • 表面貼裝

  • 4-FlipFet?

  • 4-FlipFet?

  • 帶卷 (TR)

  • IRF6100TR

IRF6100相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠(chǎng)商
    下載
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    Power MOSFET
    TRSYS
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRON...

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