= 0.135鈩?/div>
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and R
DS(on)
reduction enables an increase in
current-handling capability.
TSOP-6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
鹵 12
-55 to + 150
Units
V
A
W
mW/擄C
V
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聝
Max.
130
Units
擄C/W
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