= 112m鈩?/div>
Schottky Vf = 0.51V
2
7
3
6
4
5
Description
The
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings (T
A
= 25擄C Unless Otherwise Noted)
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
T
J,
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
脌
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum
-3.4
-2.7
-27
2.0
1.3
16
鹵 20
-55 to +150
Units
A
W
mW/擄C
V
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
R
胃JA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient
聝,
MOSFET
Junction-to-Ambient
聝,
SCHOTTKY
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
62.5
62.5
Units
擄C/W
Notes:
聛
Repetitive rating 鈥?pulse width limited by max. junction temperature (see fig. 11)
聜
Pulse width
鈮?/div>
400碌s 鈥?duty cycle
鈮?/div>
2%
聝
Surface mounted on 1 inch square copper board, t
鈮?/div>
10sec.
www.irf.com
1
10/7/04
IRF5803D2PBF 產(chǎn)品屬性
95
分離式半導(dǎo)體產(chǎn)品
FET - 單
FETKY™
MOSFET P 通道，金屬氧化物
二極管（隔離式）
40V
3.4A
112 毫歐 @ 3.4A，10V
3V @ 250µA
37nC @ 10V
1110pF @ 25V
2W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SO
管件
IRF5803D2PBF相關(guān)型號PDF文件下載
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