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IRF540NL Datasheet

  • IRF540NL

  • Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

PDF預覽

PD - 91342
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
廬
l
HEXFET
廬
Power MOSFET
D
IRF540NS
IRF540NL
V
DSS
= 100V
R
DS(on)
= 44m鈩?/div>
G
S
Advanced HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
I
D
= 33A
D
2
Pak
IRF540NS
TO-262
IRF540NL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
聡
Continuous Drain Current, V
GS
@ 10V
聡
Pulsed Drain Current
聛聡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝聡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
33
23
110
130
0.87
鹵 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.15
40
Units
擄C/W
www.irf.com
1
02/14/02

IRF540NL 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 33A

  • 44 毫歐 @ 16A，10V

  • 4V @ 250µA

  • 71nC @ 10V

  • 1960pF @ 25V

  • 130W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262

  • 管件

  • *IRF540NL

IRF540NL相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Analog IC
    ETC
  • 英文版
    Analog IC
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD

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