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Power Field Effect Transistor

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

This advanced TMOS power FET is designed to withstand high

energy in the avalanche and commutation modes. This new energy

efficient design also offers a drain鈥搕o鈥搒ource diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters, and PWM motor

controls. These devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating area

are critical and offer additional safety margin against unexpected

voltage transients.

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

鈥?/div>

Diode is Characterized for Use in Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

D

IRF540

TMOS POWER FET

27 AMPERES

100 VOLTS

RDS(on) = 0.070 OHMS

廬

G

S

CASE 221A鈥?9

TO-220AB

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Drain鈥搕o鈥揝ource Voltage

Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥搕o鈥揝ource Voltage 鈥?Continuous

Gate鈥搕o鈥揝ource Voltage

鈥?Non鈥搑epetitive (tp

鈮?/div>

10 ms)

Drain Current 鈥?Continuous

Drain Current

鈥?Continuous @ 100擄C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

10

m

s)

Total Power Dissipation

Derate above 25擄C

Operating and Storage Temperature Range

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25擄C

(VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25

W

)

Thermal Resistance 鈥?Junction鈥搕o鈥揅ase擄

Thermal Resistance

鈥?Junction鈥搕o鈥揂mbient擄

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds

E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Symbol

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

TJ, Tstg

EAS

R

胃JC

R

胃JA

TL

Value

100

鹵

20

鹵

40

27

19

95

145

1.16

鈥?55 to 150

365

0.86

62.5

260

Unit

Vdc

Vpk

Adc

Apk

Watts

W/擄C

擄C

mJ

擄C/W

擄C

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 3

漏

Motorola TMOS

Motorola, Inc. 1998

Power MOSFET Transistor Device Data

1

型號

版本

描述

廠商

下載
IRF5D

英文版

Analog IC

ETC

IRF5D
IRF5S

英文版

Analog IC

ETC

IRF5S
IRF500

英文版

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...

ETC

IRF500
IRF500

英文版

50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...

ETC [ETC]

IRF500
IRF510

英文版

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

IRF510
IRF510

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

IRF510
IRF510

英文版

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF

IRF510
IRF510

英文版

N-Channel Enhancement-Mode Vertical DMOS Power FETs

IRF510
IRF510

英文版

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)

IRF [Inter...

IRF510
IRF510

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD ...

IRF510
IRF510

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N-Channel Enhancement-Mode Vertical DMOS Power FETs

SUTEX [Sup...

IRF510
IRF510

英文版

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

INTERSIL [...

IRF510
IRF511

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N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

IRF511
IRF511

英文版

N-Channel Enhancement-Mode Vertical DMOS Power FETs

IRF511
IRF511

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD ...

IRF511
IRF511

英文版

N-Channel Enhancement-Mode Vertical DMOS Power FETs

SUTEX [Sup...

IRF511
IRF512

英文版

N-Channel Enhancement-Mode Vertical DMOS Power FETs

IRF512
IRF512

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

IRF512
IRF512

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD ...

IRF512
IRF513

英文版

N-Channel Power MOSFETs, 5.5 A, 60-100V

FAIRCHILD

IRF513

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