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IRF520N Datasheet

  • IRF520N

  • Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

  • 8頁

  • IRF

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上傳產品規(guī)格書

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PD - 91339A
IRF520N
HEXFET
廬
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 100V
G
S
R
DS(on)
= 0.20鈩?/div>
I
D
= 9.7A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
9.7
6.8
38
48
0.32
鹵 20
91
5.7
4.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
3.1
鈥撯€撯€?/div>
62
Units
擄C/W
5/13/98

IRF520N 產品屬性

  • 50

  • 分離式半導體產品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 9.7A

  • 200 毫歐 @ 5.7A，10V

  • 4V @ 250µA

  • 25nC @ 10V

  • 330pF @ 25V

  • 48W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRF520N

IRF520N相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Analog IC
    ETC
  • 英文版
    Analog IC
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD

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