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IRF520L Datasheet

  • IRF520L

  • Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

  • 186.91KB

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD -91340A
IRF520NS/L
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 100V
R
DS(on)
= 0.20鈩?/div>
G
S
I
D
= 9.7A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.7
6.8
38
3.8
48
0.32
鹵 20
91
5.7
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
3.1
40
Units
擄C/W
5/13/98

IRF520L相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Analog IC
    ETC
  • 英文版
    Analog IC
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A)
    IRF [Inter...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS Power FETs
    SUPERTEX
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 5.5 A, 60-100V
    FAIRCHILD

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