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IRF3808 Datasheet

  • IRF3808

  • Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)

  • 9頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94291B
AUTOMOTIVE MOSFET
Typical Applications
q
q
IRF3808
HEXFET
廬
Power MOSFET
D
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
q
q
q
q
q
q
V
DSS
= 75V
G
S
R
DS(on)
= 0.007鈩?/div>
I
D
= 140AV
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET 廬 Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175擄C
junction operating temperature, low R胃JC, fast switching speed and
improved repetitive avalanche rating. This combination makes the
design an extremely efficient and reliable choice for use in higher
power Automotive electronic systems and a wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
140V
97V
550
330
2.2
鹵 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
02/06/02

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