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IRF3805S Datasheet

  • IRF3805S

  • AUTOMOTIVE MOSFET

  • 12頁

  • IRF

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PD - 95880
AUTOMOTIVE MOSFET
IRF3805
IRF3805S
IRF3805L
HEXFET
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 3.3m鈩?/div>
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
I
D
= 75A
TO-220AB
IRF3805
D
2
Pak
IRF3805S
Max.
220
160
75
890
130
2.2
鹵 20
TO-262
IRF3805L
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
W
W/擄C
V
mJ
A
mJ
擄C
d
脙聶
h
Operating Junction and
Storage Temperature Range
g
730
940
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
y
y
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
Max.
0.45
鈥撯€撯€?/div>
62
40
Units
擄C/W
i
i
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount)
j
www.irf.com
1
10/21/04

IRF3805S 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道,金屬氧化物

  • 標準型

  • 55V

  • 75A

  • 3.3 毫歐 @ 75A,10V

  • 4V @ 250µA

  • 290nC @ 10V

  • 7960pF @ 25V

  • 330W

  • 表面貼裝

  • TO-263-3,D²Pak(2 引線+接片),TO-263AB

  • D2PAK

  • 管件

  • *IRF3805S

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