PD - 95843
IRF3717
HEXFET
廬
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
V
DSS
20V
4.4m
:
@V
GS
= 10V
A
A
D
D
D
D
R
DS(on)
max
I
D
20A
S
S
1
2
3
4
8
7
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
S
G
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
鹵 20
20
16
160
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/擄C
擄C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
胃JL
R
胃JA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
50
Units
擄C/W
f
Notes
聛
through
聞
are on page 10
www.irf.com
2/20/04
1
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