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IRF3710 Datasheet

  • IRF3710

  • Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

  • 96.10KB

  • 8頁

  • IRF

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PD - 91309A
IRF3710
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 100V
R
DS(on)
= 23m鈩?/div>
G
S
I
D
= 57A
Description
Advanced HEXFET
廬
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
57
40
230
200
1.3
鹵 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
01/17/02

IRF3710 產(chǎn)品屬性

  • 45 ns

  • 12 ns

  • 130 nC V @ 80

  • 3130 pF V @ 25

  • 通孔

  • 4.69mm

  • TO-220AB

  • 10.54 x 4.69 x 8.77mm

  • 3

  • -55 °C

  • 200000 mW

  • ±20 V

  • 100 V

  • 0.023

  • 57 A

  • +175 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 單

  • 10.54mm

  • 8.77mm

IRF3710相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
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    VISHAY
  • 英文版
    Inductors
    VISAY [Vis...
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
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  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...

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