= 8.0m鈩?/div>
Description
Specifically designed for use in
linear
automotive
applications this HEXFET Power MOSFET utilizes
a rugged planar process technology and device
design, which greatly improves the Safe Operating
Area (SOA) of the device. These features, coupled
with 175擄C junction operating temperature and
low thermal resistance of 0.45C/W make the
IRF3305 an ideal device for linear automotive
applications.
G
S
I
D
= 75A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
TO-220AB
Max.
140
99
75
560
330
2.2
鹵 20
W
W/擄C
V
mJ
A
mJ
-55 to + 175
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
A
Units
聶
P
D
@T
C
= 25擄C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
脙聶
h
470
860
See Fig.12a, 12b, 15, 16
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
y
y
i
Parameter
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
i
www.irf.com
1
7/2/04
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