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IRF322 Datasheet

  • IRF322

  • 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...

  • 71.45KB

  • 7頁

  • INTERSIL   INTERSIL

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Semiconductor
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
July 1998
Features
鈥?2.8A and 3.3A, 350V and 400V
鈥?r
DS(ON)
= 1.8鈩?and 2.5鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
IRF320
IRF321
IRF322
IRF323
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
IRF320
IRF321
IRF322
IRF323
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
1569.3
5-1

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    INTERSIL
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