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IRF3205L Datasheet

  • IRF3205L

  • Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

  • 10頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94149
IRF3205S/L
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
R
DS(on)
= 8.0m鈩?/div>
G
S
I
D
= 110A
聟
Description
Advanced HEXFET
廬
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D
2
Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
D
2
Pak
IRF3205S
TO-262
IRF3205L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
110
聟
80
390
200
1.3
鹵 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)
*
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
www.irf.com
1
03/09/01

IRF3205L 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 55V

  • 110A

  • 8 毫歐 @ 62A，10V

  • 4V @ 250µA

  • 146nC @ 10V

  • 3247pF @ 25V

  • 200W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262

  • 管件

  • *IRF3205L

IRF3205L相關(guān)型號PDF文件下載

  • 型號
    版本
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    廠商
    下載
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    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...

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