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IRF3007 Datasheet

  • IRF3007

  • AUTOMOTIVE MOSFET

  • 9頁(yè)

  • IRF

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PD -94424A
AUTOMOTIVE MOSFET
Typical Applications
鈼?/div>
IRF3007
HEXFET
廬
Power MOSFET
D
42 Volts Automotive Electrical Systems
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
V
DSS
= 75V
G
S
R
DS(on)
= 0.0126鈩?/div>
I
D
= 75A
Description
Specifically designed for Automotive applications, this
design of HEXFET
廬
Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175擄C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聡
Avalanche Current聛
Repetitive Avalanche Energy聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
80
56
75
320
200
1.3
鹵 20
280
946
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
1.1 (10)
N鈥 (lbf鈥n)
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.74
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
9/16/02

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