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IRF3007S Datasheet

  • IRF3007S

  • 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

  • 11頁(yè)

  • ETC

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PD - 94548A
AUTOMOTIVE MOSFET
Typical Applications
鈼?/div>
IRF3007S
IRF3007L
HEXFET
廬
Power MOSFET
D
42 Volts Automotive Electrical Systems
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
鈼?/div>
鈼?/div>
鈼?/div>
鈼?/div>
V
DSS
= 75V
G
S
R
DS(on)
= 0.0126鈩?/div>
I
D
= 62A
Description
Specifically designed for Automotive applications, this design of
HEXFET
廬
Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175擄C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
2
Pak
IRF3007S
Max.
TO-262
IRF3007L
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聡
Avalanche Current聛
Repetitive Avalanche Energy聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
62
44
320
120
0.8
鹵 20
290
946
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.25
62
Units
擄C/W
** This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
www.irf.com
1
09/19/02

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