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IRF2907ZS-7PPBF Datasheet

  • IRF2907ZS-7PPBF

  • IRF2907ZS-7PPBF

  • 10頁(yè)

  • IRF

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PD - 97031
IRF2907ZS-7PPbF
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
HEXFET
廬
Power MOSFET
D
V
DSS
= 75V
R
DS(on)
= 3.8m鈩?/div>
聣
G
S
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET
廬
Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175擄C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I
D
= 160A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Max.
180
120
160
700
300
2.0
鹵 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
Units
A
c
W
W/擄C
V
mJ
A
mJ
擄C
c
h
d
g
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
j
Parameter
Typ.
鈥撯€撯€?/div>
0.50
Max.
0.50
鈥撯€撯€?/div>
62
40
Units
擄C/W
j
ij
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
08/03/05

IRF2907ZS-7PPBF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 75V

  • 160A

  • 3.8 毫歐 @ 110A，10V

  • 4V @ 250µA

  • 260nC @ 10V

  • 7580pF @ 25V

  • 300W

  • 表面貼裝

  • TO-263-7，D²Pak（6 引線+接片），TO-263CB

  • D2PAK（7-Lead）

  • 管件

IRF2907ZS-7PPBF相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
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    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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