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IRF2805PBF Datasheet

  • IRF2805PBF

  • AUTOMOTIVE MOSFET

  • 9頁

  • IRF

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PD - 95493
AUTOMOTIVE MOSFET
Typical Applications
l
IRF2805PbF
HEXFET
廬
Power MOSFET
D
l
Climate Control, ABS, Electronic Braking,
Windshield Wipers
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
V
DSS
= 55V
R
DS(on)
= 4.7m鈩?/div>
S
Features
l
l
l
l
l
I
D
= 75A
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175擄C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
= 25擄C
= 100擄C
= 25擄C
= 25擄C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Single Pulse Avalanche Energy Tested Value聡
Avalanche Current聛
Repetitive Avalanche Energy聠
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
175
120
75
700
330
2.2
鹵 20
450
1220
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
T
J
T
STG
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
1.1 (10)
N鈥 (lbf鈥n)
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.45
鈥撯€撯€?/div>
62
Units
擄C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
07/01/04

IRF2805PBF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 75A

  • 4.7 毫歐 @ 104A，10V

  • 4V @ 250µA

  • 230nC @ 10V

  • 5110pF @ 25V

  • 330W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRF2805PBF

IRF2805PBF相關(guān)型號PDF文件下載

  • 型號
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    廠商
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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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