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IRF2805L Datasheet

  • IRF2805L

  • AUTOMOTIVE MOSFET

  • 11頁

  • IRF

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PD - 94428
AUTOMOTIVE MOSFET
Typical Applications
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IRF2805S
IRF2805L
HEXFET
廬
Power MOSFET
D
Climate Control
ABS
Electronic Braking
Windshield Wipers
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
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鈼?/div>
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V
DSS
= 55V
G
S
R
DS(on)
= 4.7m鈩?/div>
I
D
= 135AV
Description
Specifically designed for Automotive applications, this
HEXFET廬 Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175擄C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
D
2
Pak
IRF2805S
TO-262
IRF2805L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(6 sigma)
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Single Pulse Avalanche Energy Tested ValueX
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt
S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
135V
96V
700
200
1.3
鹵 20
380
1220
See Fig.12a, 12b, 15, 16
2.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted, steady state)**
Typ.
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鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
06/10/02

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