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IRF2804S-7P Datasheet

  • IRF2804S-7P

  • AUTOMOTIVE MOSFET

  • 10頁(yè)

  • IRF

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PD - 96891
AUTOMOTIVE MOSFET
IRF2804S-7P
Features
l
l
l
l
l
HEXFET
廬
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
G
S
R
DS(on)
= 1.6m鈩?/div>
I
D
= 160A
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175擄C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
D
@ T
C
= 25擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
320
230
160
1360
330
2.2
鹵 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/擄C
V
mJ
A
mJ
擄C
c
h
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
j
Parameter
Typ.
鈥撯€撯€?/div>
0.50
Max.
0.50
鈥撯€撯€?/div>
62
40
Units
擄C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
Junction-to-Ambient (PCB Mount, steady state)
ij
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
9/6/04

IRF2804S-7P 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 40V

  • 160A

  • 1.6 毫歐 @ 160A，10V

  • 4V @ 250µA

  • 260nC @ 10V

  • 6930pF @ 25V

  • 330W

  • 表面貼裝

  • TO-263-7，D²Pak（6 引線+接片），TO-263CB

  • D2PAK（7-Lead）

  • 管件

  • *IRF2804S-7P

IRF2804S-7P相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL
  • 英文版
    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...

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