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IRF247 Datasheet

  • IRF247

  • 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Pow...

  • 7頁(yè)

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Semiconductor
IRF244, IRF245,
IRF246, IRF247
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
January 1998
Features
鈥?14A and 13A, 275V and 250V
鈥?r
DS(ON)
= 0.28鈩?and 0.34鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?275V, 250V DC Rated - 120V AC Line System
Operation
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
IRF244
IRF245
IRF246
IRF247
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
IRF244
IRF245
IRF246
IRF247
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1997
File Number
2209.2
5-1

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