IRF236 Datasheet

IC型號(hào)：
IRF236
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8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel P...
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Semiconductor

IRF234, IRF235,

IRF236, IRF237

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speci鏗乪d level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17413.

January 1998

Features

鈥?8.1A and 6.5A, 275V and 250V

鈥?r

DS(ON)

= 0.45鈩?and 0.68鈩?/div>

鈥?Single Pulse Avalanche Energy Rated

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?275V, 250V DC Rated - 120V AC Line System

Operation

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

IRF234

IRF235

IRF236

IRF237

PACKAGE

TO-204AA

BRAND

IRF234

IRF235

IRF236

IRF237

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1997

File Number

2208.3

5-1

型號(hào)

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