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IRF2204L Datasheet

  • IRF2204L

  • TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) |...

  • 11頁(yè)

  • ETC

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PD - 94502
AUTOMOTIVE MOSFET
Typical Applications
鈼?/div>
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IRF2204S
IRF2204L
HEXFET
Power MOSFET
D
Electric Power Steering
14 Volts Automotive Electrical Systems
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
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鈼?/div>
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V
DSS
= 40V
G
S
R
DS(on)
= 3.6m鈩?/div>
I
D
= 170AV
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175擄C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
D
2
Pak
IRF2204S
TO-262
IRF2204L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
170V
120V
850
200
1.3
鹵 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
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鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
www.irf.com
1
07/01/02

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    4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Pow...
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