= 3.6m鈩?/div>
I
D
= 170AV
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175擄C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
D
2
Pak
IRF2204S
TO-262
IRF2204L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
170V
120V
850
200
1.3
鹵 20
460
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.75
40
Units
擄C/W
www.irf.com
1
07/01/02
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