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IRF1704 Datasheet

  • IRF1704

  • Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)

  • 8頁(yè)

  • IRF

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PD -94012B
AUTOMOTIVE MOSFET
Benefits
l
l
l
l
l
l
l
IRF1704
D
200擄C Operaing Temperature
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Repetitive Avalanche Allowed
up to Tj Max
Automotive Qualified (Q101)
HEXFET
廬
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 0.004鈩?/div>
G
I
D
= 170A聠
S
Description
Specifically designed for Automotive applications, this HEXFET
廬
power
MOSFET has a 200擄C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET
廬
power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200擄C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 擄C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
T
LEAD
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Lead Temperature聡
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
170聠
120
680
230
1.3
鹵 20
670
100
23
1.9
-55 to + 200
175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Max.
0.75
鈥撯€撯€?/div>
62
Units
擄C/W
www.irf.com
1
02/13/02

IRF1704 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 40V

  • 170A

  • 4 毫歐 @ 100A，10V

  • 4V @ 250µA

  • 260nC @ 10V

  • 6950pF @ 25V

  • 230W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

IRF1704相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC
  • 英文版
    50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUM...
    ETC [ETC]
  • 英文版
    N-Channel Power MOSFETs, 27 A, 60-100V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 27 A, 60-100V
    FAIRCHILD ...
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL [...

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