PD- 94504
HEXFET
廬
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterrutible Power Supplies
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
聢
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
IRF1312
IRF1312S
IRF1312L
I
D
95A聠
V
DSS
80V
R
DS(on)
max
10m鈩?/div>
TO-220AB
IRF1312
D
2
Pak
IRF1312S
TO-262
IRF1312L
Max.
95聠
67聠
380
3.8
210
1.4
鹵 20
5.1
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Notes
聛
through
聢
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
聡
Junction-to-Ambient
聡
Junction-to-Ambient (PCB mount)
聢
are on page 11
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
0.73
鈥撯€撯€?/div>
62
40
Units
擄C/W
www.irf.com
1
7/01/02
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