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IRF1310S Datasheet

  • IRF1310S

  • Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

  • 8頁

  • IRF

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PD - 9.1221
IRF1310S
HEXFET
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175擄C Operating Temperature
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
V
DSS
= 100V
R
DS(on)
= 0.04
鈩?/div>
I
D
= 41A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
C
= 25擄C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
41
29
160
170
3.8
1.1
0.025
鹵20
230
41
17
5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
JC
R
JA
R
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
0.90
40
62
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
To Order
Revision 0

IRF1310S相關(guān)型號PDF文件下載

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    N-Channel Power MOSFETs, 11 A, 60-100 V
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    INTERSIL [...
  • 英文版
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    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL [...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 11 A, 60-100 V
    FAIRCHILD
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL
  • 英文版
    8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, P...
    INTERSIL [...

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